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2N5551

  • Manufacturer: onsemi
  • Product NO: 2N5551
  • Package: TO-226-3, TO-92-3 Long Body
  • Datasheet: PDF
  • Stock: 1300
  • price: $0.00
  • Description: Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)
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Details

Tags

Parameters
Manufacturer onsemi
Series -
Package Bulk
Product Status Obsolete
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92 (TO-226)
Base Product Number 2N5551
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
Other Names 2N5551OS
Standard Package 5,000
ECCN EAR99
HTSUS 8541.21.0075
Operating Temperature -55°C ~ 150°C (TJ)
Power - Max 625 mW
Voltage - Collector Emitter Breakdown (Max) 160 V
Current - Collector (Ic) (Max) 600 mA
Current - Collector Cutoff (Max) 50nA (ICBO)
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Frequency - Transition 300MHz
Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)

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