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Parameters | |
---|---|
Manufacturer | International Rectifier |
Series | HEXFET® |
Package | Bulk |
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 940mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 75W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-204AA (TO-3) |
Package / Case | TO-204AA, TO-3 |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 135 |