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Parameters | |
---|---|
Manufacturer | Alpha & Omega Semiconductor Inc. |
Series | - |
Package | Tube |
Product Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 56.8W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251-3 |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Base Product Number | AOU2 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 4,000 |