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Parameters | |
---|---|
Manufacturer | International Rectifier |
Series | HEXFET® |
Package | Bulk |
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.8A, 4.3A |
Rds On (Max) @ Id, Vgs | 45mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
Power - Max | 2.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Base Product Number | AUIRF7379 |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 1 |
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