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Parameters | |
---|---|
Manufacturer | International Rectifier |
Series | HEXFET® |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.9mOhm @ 43A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2545 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 46W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DirectFET™ Isometric M2 |
Package / Case | DirectFET™ Isometric M2 |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 1 |