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Parameters | |
---|---|
Manufacturer | International Rectifier |
Series | HEXFET® |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-PAK (TO-252AA) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
RoHS Status | Not applicable |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 0000.00.0000 |
Standard Package | 1 |