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Parameters | |
---|---|
Manufacturer | Philips |
Series | Automotive, AEC-Q101, TrenchMOS™ |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 5.2mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 11810 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 349W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
RoHS Status | Not applicable |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | Vendor Undefined |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 1 |
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