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Parameters | |
---|---|
Manufacturer | Wolfspeed, Inc. |
Series | C3M™ |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 21mOhm @ 55.8A, 15V |
Vgs(th) (Max) @ Id | 3.6V @ 15.5mA |
Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 15 V |
Vgs (Max) | +15V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 5011 pF @ 400 V |
FET Feature | - |
Power Dissipation (Max) | 416W (Tc) |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-4L |
Package / Case | TO-247-4 |
Base Product Number | C3M0015065 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | Not Applicable |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 30 |
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