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Parameters | |
---|---|
Manufacturer | CoolCAD |
Series | - |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 135mOhm @ 10A, 15V |
Vgs(th) (Max) @ Id | 3.2V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 15 V |
Vgs (Max) | +15V, -5V |
Input Capacitance (Ciss) (Max) @ Vds | 1810 pF @ 200 V |
FET Feature | Standard |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-4 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
REACH Status | REACH Unaffected |
Other Names | 3892-CC-C2-B15-0322 |
Standard Package | 5 |