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Parameters | |
---|---|
Manufacturer | Cambridge GaN Devices |
Series | ICeGaN™ |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | - |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V |
Vgs(th) (Max) @ Id | 4.2V @ 2.75mA |
Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |
Vgs (Max) | +20V, -1V |
FET Feature | Current Sensing |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-DFN (5x6) |
Package / Case | 8-PowerVDFN |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 5,000 |
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