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Parameters | |
---|---|
Manufacturer | EPC |
Series | eGaN® |
Package | Tape & Reel (TR) |
Product Status | Discontinued at / |
Technology | GaNFET (Gallium Nitride) |
Configuration | 2 N-Channel (Half Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 23A |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 40V |
Power - Max | - |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Base Product Number | EPC210 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 500 |