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Parameters | |
---|---|
Manufacturer | EPC |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
Technology | GaNFET (Gallium Nitride) |
Configuration | 2 N-Channel (Half Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
Rds On (Max) @ Id, Vgs | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 5V, 5.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 15V, 590pF @ 15V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Base Product Number | EPC211 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 2,500 |