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Parameters | |
---|---|
Manufacturer | EPC |
Series | eGaN® |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
Rds On (Max) @ Id, Vgs | 11mOhm @ 11A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
Vgs (Max) | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 576 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Die |
Package / Case | Die |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0040 |
Standard Package | 2,500 |