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Parameters | |
---|---|
Manufacturer | EPC Space, LLC |
Series | e-GaN® |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 28mOhm @ 18A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 5 V |
Vgs (Max) | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-SMD |
Package / Case | 4-SMD, No Lead |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
HTSUS | 0000.00.0000 |
Other Names | 4107-FBG20N18BSH |
Standard Package | 1 |
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