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Parameters | |
---|---|
Manufacturer | Fairchild Semiconductor |
Series | QFET® |
Package | Bulk |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250 V |
Current - Continuous Drain (Id) @ 25°C | 15.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 270mOhm @ 7.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 53.5 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 139W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK (TO-263) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
RoHS Status | ROHS3 Compliant |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 800 |