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Parameters | |
---|---|
Manufacturer | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 14.3mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 1140 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
RoHS Status | RoHS Compliant |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0000 |
Other Names | 3141-G06N02HTR |
Standard Package | 2,500 |