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Parameters | |
---|---|
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 16A |
Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 15 V |
Power Dissipation (Max) | 3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 4,000 |
Manufacturer | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
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