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Parameters | |
---|---|
Manufacturer | Global Power Technology-GPT |
Series | - |
Package | Cut Tape (CT) |
Product Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200 V |
Current - Average Rectified (Io) (per Diode) | 62A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247AB |
REACH Status | REACH info available upon request |
ECCN | EAR99 |
HTSUS | 8541.10.0080 |
Standard Package | 30 |
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