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Parameters | |
---|---|
Manufacturer | GeneSiC Semiconductor |
Series | - |
Package | Tube |
Product Status | Obsolete |
FET Type | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 25mOhm @ 50A |
Vgs(th) (Max) @ Id | - |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | 7209 pF @ 800 V |
FET Feature | - |
Power Dissipation (Max) | 583W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AB |
Package / Case | TO-247-3 |
RoHS Status | RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 30 |
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