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Parameters | |
---|---|
Manufacturer | SemiQ |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id | 4V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 20 V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 1336 pF @ 1000 V |
FET Feature | - |
Power Dissipation (Max) | 142W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227 |
Package / Case | SOT-227-4, miniBLOC |
Base Product Number | GCMX080 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Affected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 1560-GCMX080B120S1-E1 |
Standard Package | 10 |