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Parameters | |
---|---|
Manufacturer | GE Aerospace |
Series | SiC Power |
Package | Bulk |
Product Status | Active |
Technology | Silicon Carbide (SiC) |
Configuration | 6 N-Channel (3-Phase Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
Current - Continuous Drain (Id) @ 25°C | 425A (Tc) |
Rds On (Max) @ Id, Vgs | 4.45mOhm @ 425A, 20V |
Vgs(th) (Max) @ Id | 4.5V @ 160mA |
Gate Charge (Qg) (Max) @ Vgs | 1207nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds | 29100pF @ 900V |
Power - Max | 1250W (Tc) |
Operating Temperature | -55°C ~ 150°C (Tc) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | - |
Base Product Number | GE17045 |
RoHS Status | RoHS non-compliant |
Moisture Sensitivity Level (MSL) | Not Applicable |
REACH Status | Vendor Undefined |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 4014-GE17045EEA3 |
Standard Package | 1 |
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