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| Parameters | |
|---|---|
| Manufacturer | GE Aerospace |
| Series | SiC Power |
| Package | Bulk |
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Current - Continuous Drain (Id) @ 25°C | 1.275kA |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1275A, 20V |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |
| Gate Charge (Qg) (Max) @ Vgs | 3621nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 82nF @ 600V |
| Power - Max | 3.75kW |
| Operating Temperature | -55°C ~ 150°C (Tc) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
| Base Product Number | GE17140 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | Vendor Undefined |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 4014-GE17140CEA3 |
| Standard Package | 1 |
Mosfet Array 1700V (1.7kV) 1.275kA 3.75kW Chassis Mount
