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| Parameters | |
|---|---|
| Manufacturer | GaNPower |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Vgs(th) (Max) @ Id | 1.2V @ 3.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 6 V |
| Vgs (Max) | +7.5V, -12V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | Vendor Undefined |
| REACH Status | Vendor Undefined |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 4025-GPI65060DFNTR |
| Standard Package | 1 |
