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Parameters | |
---|---|
Series | - |
Package | Tube |
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 305 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9151 pF @ 30 V |
FET Feature | - |
Power Dissipation (Max) | 280W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
RoHS Status | RoHS Compliant |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0000 |
Standard Package | 50 |
Manufacturer | Goford Semiconductor |
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