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Parameters | |
---|---|
Manufacturer | Honeywell Aerospace |
Series | HTMOS™ |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id | 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
Vgs (Max) | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 28 V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tj) |
Operating Temperature | -55°C ~ 225°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 8-CDIP-EP |
Package / Case | 8-CDIP Exposed Pad |
Base Product Number | HTNFET |
RoHS Status | RoHS non-compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 342-1078 |
Standard Package | 1 |
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