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| Parameters | |
|---|---|
| Manufacturer | Honeywell Aerospace |
| Series | HTMOS™ |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
| Vgs (Max) | 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 28 V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tj) |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Supplier Device Package | - |
| Package / Case | 8-CDIP Exposed Pad |
| Base Product Number | HTNFET |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1 |
