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| Parameters | |
|---|---|
| Manufacturer | International Rectifier |
| Series | HEXFET® |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.6W (Ta), 20W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN-Dual (3.3x3.3), Power33 |
| Package / Case | 8-PowerVDFN |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 0000.00.0000 |
| Standard Package | 1 |
