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Parameters | |
---|---|
Manufacturer | Infineon Technologies |
Series | HEXFET®, StrongIRFET™ |
Package | Tube |
Product Status | Discontinued at / |
Mounting Type | Surface Mount |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package | D2PAK (7-Lead) |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
Other Names | SP001565236 |
Standard Package | 50 |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 12960 pF @ 25 V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 1.4mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 250µA |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 354 nC @ 10 V |