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Parameters | |
---|---|
Manufacturer | International Rectifier |
Series | HEXFET® |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
Rds On (Max) @ Id, Vgs | 13.5mOhm @ 31A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 5 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 80W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 0000.00.0000 |
Standard Package | 1 |
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