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| Parameters | |
|---|---|
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Current - Average Rectified (Io) (per Diode) | 120A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 650 mV @ 60 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 3 mA @ 20 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Twin Tower |
| Supplier Device Package | Twin Tower |
| Base Product Number | MBR12030 |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Other Names | 1242-1090 |
| Standard Package | 40 |
Diode Array 1 Pair Common Cathode 30 V 120A (DC) Chassis Mount Twin Tower
