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| Parameters | |
|---|---|
| Manufacturer | MoSys, Inc. |
| Series | Automotive, AEC-Q100 |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | RAM |
| Technology | SRAM, RLDRAM |
| Memory Size | 512Mbit |
| Memory Organization | 128M x 4 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Access Time | 3.2 ns |
| Voltage - Supply | - |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 288-BGA, FCBGA |
| Supplier Device Package | 288-FCBGA (19x19) |
| Base Product Number | MSQ220 |
| ECCN | 3A991B2B |
| HTSUS | 8542.32.0041 |
| Other Names | 2331-MSQ220AJC288-10 |
| Standard Package | 84 |
SRAM, RLDRAM Memory IC 512Mbit Parallel 3.2 ns 288-FCBGA (19x19)
