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| Parameters | |
|---|---|
| Manufacturer | MoSys, Inc. |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | 1T-SRAM |
| Memory Size | 576Mbit |
| Memory Organization | 8M x 72 |
| Memory Interface | Parallel |
| Clock Frequency | 1.25 GHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 2.6 ns |
| Voltage - Supply | 0.95V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 324-BGA |
| Supplier Device Package | 324-PBGA (19x19) |
| Base Product Number | MSR820 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 4 (72 Hours) |
| ECCN | 3A991B2B |
| HTSUS | 8542.32.0036 |
| Other Names | 2331-MSR820AJC288-12 |
| Standard Package | 84 |
1T-SRAM Memory IC 576Mbit Parallel 1.25 GHz 2.6 ns 324-PBGA (19x19)
