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Parameters | |
---|---|
Manufacturer | Renesas |
Series | - |
Package | Bulk |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 14250 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta), 288W (Tc) |
Operating Temperature | 175°C |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263-3 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
RoHS Status | RoHS non-compliant |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.21.0095 |
Other Names | 2156-NP110N055PUJ-E1B-AY |
Standard Package | 51 |