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| Parameters | |
|---|---|
| Manufacturer | NEC Corporation |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 66W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 (MP-3) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Base Product Number | NP32 |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 0000.00.0000 |
| Standard Package | 1 |
N-Channel 55 V 32A (Ta) 1.2W (Ta), 66W (Tc) Through Hole TO-251 (MP-3)
