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Parameters | |
---|---|
Manufacturer | PN Junction Semiconductor |
Series | P3M |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 2.6Ohm @ 600mA, 15V |
Vgs(th) (Max) @ Id | 2.2V @ 600µA (Typ) |
Vgs (Max) | +19V, -8V |
FET Feature | - |
Power Dissipation (Max) | 75W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-2L |
Package / Case | TO-220-2 |
RoHS Status | ROHS3 Compliant |
REACH Status | REACH Affected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 4237-P3M173K0T3 |
Standard Package | 1 |
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