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| Parameters | |
|---|---|
| Manufacturer | PN Junction Semiconductor |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 350A |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 300A, 20V |
| Vgs(th) (Max) @ Id | 5V @ 100mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 29.5pF @ 1000V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Base Product Number | PAA12400 |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Affected |
| Other Names | 4237-PAA12400BM3 |
| Standard Package | 1 |
