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Parameters | |
---|---|
Power Dissipation (Max) | 8.33W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-205AF (TO-39) |
Package / Case | TO-205AF Metal Can |
RoHS Status | RoHS non-compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | Vendor Undefined |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 4 |
Manufacturer | Harris Corporation |
Series | - |
Package | Bulk |
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.65Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
FET Feature | - |