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    RN1964TE85LF

    • Manufacturer: Toshiba Semiconductor and Storage
    • Product NO: RN1964TE85LF
    • Package: 6-TSSOP, SC-88, SOT-363
    • Datasheet: PDF
    • Stock: 2
    • price: $0.34
    • Description: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
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    Details

    Tags

    Parameters
    Manufacturer Toshiba Semiconductor and Storage
    Series -
    Package Tape & Reel (TR)
    Product Status Active
    Transistor Type 2 NPN - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) 100mA
    Voltage - Collector Emitter Breakdown (Max) 50V
    Resistor - Base (R1) 47kOhms
    Resistor - Emitter Base (R2) 47kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
    Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
    Current - Collector Cutoff (Max) 100nA (ICBO)
    Frequency - Transition 250MHz
    Power - Max 200mW
    Mounting Type Surface Mount
    Package / Case 6-TSSOP, SC-88, SOT-363
    Supplier Device Package US6
    Base Product Number RN1964
    RoHS Status RoHS Compliant
    Moisture Sensitivity Level (MSL) 1 (Unlimited)
    ECCN EAR99
    HTSUS 8541.21.0095
    Standard Package 3,000

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