FIRST ORDER
FREE 10% DISCOUNT
Parameters | |
---|---|
Manufacturer | Sanan Semiconductor |
Series | - |
Package | Tube |
Product Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) (per Diode) | 25A |
Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr | 24 µA @ 650 V |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247-3L |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | Not Applicable |
ECCN | EAR99 |
HTSUS | 8541.10.0000 |
Other Names | 5023-SDS065J016G3 |
Standard Package | 300 |