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Parameters | |
---|---|
Manufacturer | Vishay Siliconix |
Series | EF |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 84mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2733 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 184W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Base Product Number | SIHB085 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 742-SIHB085N60EF-GE3 |
Standard Package | 1,000 |
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