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| Parameters | |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Rds On (Max) @ Id, Vgs | 213mOhm @ 1A, 4V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 4 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | UFV |
| Package / Case | 6-SMD (5 Leads), Flat Lead |
| Base Product Number | SSM5G10 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 3,000 |
P-Channel 20 V 1.5A (Ta) 500mW (Ta) Surface Mount UFV
