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Parameters | |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | N and P-Channel |
FET Feature | Logic Level Gate, 1.2V Drive |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 180mA, 100mA |
Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
Power - Max | 200mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Base Product Number | SSM6L35 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.21.0095 |
Standard Package | 3,000 |
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