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Parameters | |
---|---|
Rds On (Max) @ Id, Vgs | 88mOhm @ 15.4A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 300 V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Base Product Number | TK31A60 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 50 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
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