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Parameters | |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 300 V |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Product Number | TK5P60 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 2,000 |
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