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| Parameters | |
|---|---|
| Package / Case | TO-247-3 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 1707-TP65H015G5WS |
| Standard Package | 30 |
| Manufacturer | Transphorm |
| Series | SuperGaN™ |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5218 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 266W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
N-Channel 650 V 93A (Tc) 266W (Tc) Through Hole TO-247-3
