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Parameters | |
---|---|
Manufacturer | Transphorm |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Cascode Gallium Nitride FET) |
Drain to Source Voltage (Vdss) | 900 V |
Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 63mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id | 4.4V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 600 V |
FET Feature | - |
Power Dissipation (Max) | 119W (Tc) |
Operating Temperature | -55°C ~ 150°C |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Base Product Number | TP90H050 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 1707-TP90H050WS |
Standard Package | 30 |
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