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Parameters | |
---|---|
Manufacturer | Transphorm |
Series | - |
Package | Bulk |
Product Status | Obsolete |
Technology | GaNFET (Gallium Nitride) |
Configuration | 2 N-Channel (Half Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
Power - Max | 470W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | Module |
Supplier Device Package | Module |
Base Product Number | TPD3215 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 1 |
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