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Parameters | |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVIII-H |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 30 V |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta), 78W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP Advance (5x5) |
Package / Case | 8-PowerVDFN |
Base Product Number | TPH2R306 |
RoHS Status | RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 5,000 |
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