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| Parameters | |
|---|---|
| Manufacturer | Transphorm |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Vgs (Max) | ±18V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V |
| FET Feature | - |
| Power Dissipation (Max) | 81W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (8x8) |
| Package / Case | 3-PowerDFN |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 60 |
N-Channel 650 V 16A (Tc) 81W (Tc) Surface Mount PQFN (8x8)
