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Parameters | |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Package | Tube |
Product Status | Obsolete |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 12A |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 90 µA @ 170 V |
Capacitance @ Vr, F | 65pF @ 650V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220-2L |
Operating Temperature - Junction | 175°C (Max) |
Base Product Number | TRS12E65 |
RoHS Status | RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.10.0080 |
Standard Package | 50 |
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